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NTS4172N
MOSFET ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate ? to ? Source Leakage Current
V (BR)DSS
V (BR)DSS
/T J
I DSS
I GSS
V GS = 0 V, I D = 250 m A
I D = 250 m A, Reference to 25 ° C
V GS = 0 V, V DS = 24 V, T J = 25 ° C
V GS = 0 V, V DS = 24 V, T J = 125 ° C
V DS = 0 V, V GS = " 12 V
30
8.4
1.0
5.0
± 100
V
mV/ ° C
m A
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V GS(TH)
V GS = V DS , I D = 250 m A
0.6
1.0
1.4
V
Negative Threshold Temperature
Coefficient
V GS(TH)
/T J
3.1
mV/ ° C
Drain ? to ? Source On ? Resistance
R DS(on)
V GS = 10 V, I D = 1.7 A
58
93
m W
V GS = 4.5 V, I D = 1.5 A
V GS = 2.5 V, I D = 1.0 A
64
79
100
140
Forward Transconductance
g FS
V DS = 5.0 V, I D = 1.7 A
4.2
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C iss
381
pF
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V GS = 0 V, f = 1.0 MHz,
V DS = 15 V
39.6
32.6
Total Gate Charge
Q G(TOT)
4.38
nC
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TH)
Q GS
Q GD
V GS = 4.5 V, V DS = 15 V,
I D = 1.7 A
0.40
0.62
1.33
Gate Resistance
R G
4.5
W
SWITCHING CHARACTERISTICS (Note 4)
Turn ? On Delay Time
t d(on)
7.5
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = 4.5 V, V DD = 15 V,
I D = 1.7 A, R G = 3 W
4.4
16.1
2.2
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
V SD
t RR
t a
t b
Q RR
V GS = 0 V, I S = 1.0 A
V GS = 0 V, I S = 1.0 A,
dI SD /d t = 100 A/ m s
0.76
7.9
5.0
2.9
2.0
1.0
V
ns
nC
2. Surface ? mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces)
3. Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2%
4. Switching characteristics are independent of operating junction temperatures
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